Flexible electronic device

ABSTRACT

An electronic device is provided. The electronic device includes a supporting substrate, a flexible substrate disposed on the supporting substrate, a first conductive layer disposed on the flexible substrate, a second conductive layer disposed on the first conductive layer, a plurality of organic elements disposed between the first conductive layer and the second conductive layer, and an opening passing through the supporting substrate and exposing a portion of the flexible substrate. The first conductive layer alternately contacts the second conductive layer and the plurality of organic elements.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 16/390,402,filed on Apr. 22. 2019, which claims priority to U.S. Provisional PatentApplication No. 62/673,212, filed on May 18, 2018, and China PatentApplication No. 201811196586.8 tiled on Oct. 15, 2018, which areincorporated by reference herein in their entirety.

BACKGROUND Field

The disclosure relates to an electronic device, and more particularly toa flexible electronic device.

Description of the Related Art

In general, a display area is surrounded by a frame area without adisplay function, and driving elements and wiring layers are disposed inthe frame area, However, the frame area will limit the available spaceof a screen, so it is desired to minimize the frame area to achieve thegreatest screen space. Furthermore, conventional flexible electronicdevices also have a problem wherein wiring in the electronic devices maybreak if the flexible electronic device is bent too many times or theradius of curvature of the flexible electronic device during bending istoo low, which reduces the reliability of the conventional flexibleelectronic devices.

SUMMARY

The present disclosure is related to an electronic device with a displayarea and a non-display area. The electronic device includes a supportingsubstrate, a flexible substrate, a first organic insulating layer, afirst conductive layer, a second conductive layer, a second organicinsulating layer, and a resilient structure. The flexible substrate isdisposed on the supporting substrate. The first organic insulating layeris disposed on the flexible substrate. The first conductive layer isdisposed on the first organic insulating layer. The second conductivelayer is disposed on the first conductive layer. The second organicinsulating layer is disposed on the second conductive layer. Theresilient structure includes resilient elements disposed between thefirst conductive layer and the second conductive layer. The firstorganic insulating layer, the second organic insulating layer, the firstconductive layer, the second conductive layer and the resilientstructure are disposed on the non-display area, and the first conductivelayer alternately contacts the second conductive layer and the resilientelements.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion,

FIG. 1 is a schematic view of an electronic device according to anembodiment of the present disclosure.

FIG. 2A is a schematic view of an electronic device under a bendingcondition according to an embodiment of the present disclosure,

FIG. 2B is a schematic view of an electronic device under anotherbending condition according to an embodiment of the present disclosure.

FIG. 3A is a cross-sectional view of an electronic device according toan embodiment of the present disclosure.

FIG. 3B is an enlarged view of an area indicated by a dashed line inFIG. 3A.

FIG. 3C is a cross-sectional view of the electronic device in FIG. 3Awhile being bent in the same way as in FIG. 2A.

FIG. 3D is a cross-sectional view of the electronic device in FIG. 3Awhile being bent in the same way as in FIG. 2B.

FIG. 4A is a cross-sectional view of an electronic device according toanother embodiment of the present disclosure.

FIG. 4B is a cross-sectional view of the electronic device in FIG. 4Awhile being bent in the same way as in FIG. 2A.

FIG. 4C is a cross-sectional view of the electronic device in FIG. 4Awhile being bent in the same way as in FIG. 2B.

FIGS. 5A-5C are schematic views showing the position relationshipsbetween conductive structures and resilient elements according to someembodiments of the present disclosure.

FIG. 6 is a flow diagram of manufacturing the electronic deviceaccording to some embodiments of the present disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact.

In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a feature on, connected to, and/or coupled toanother feature in the present disclosure that follows may includeembodiments in which the features are formed in direct contact, and mayalso include embodiments in which additional features may be formedinterposing the features, that the features may not be in directcontact. In addition, spatially relative terms, for example, “vertical,”“above,” “over,” “below,”, “bottom,” etc. as well as derivatives thereof(e.g., “downwardly,” “upwardly,” etc.) are used for ease of the presentdisclosure of one features relationship to another feature. Thespatially relative terms are intended to cover different orientations ofthe device including the features.

FIG. 1 is a schematic view of an electronic device 1 according to anembodiment of the present disclosure. In this embodiment, the electronicdevice 1 includes a display area 2 and a non-display area 3. Thenon-display area 3 includes a bending area 4 and a wiring area 5,wherein the border between the display area 2 and the bending area 4 andthe border between the bending area 4 and the wiring area 5 may befurther defined later. In this embodiment, a wiring W is disposed on thewiring area 5 for connecting to other devices (not shown). In someembodiments, the wiring W maybe, but not limited to, chip on film (COF),flexible printed circuit (FPC), or printed circuit hoard (PCB).

The electronic device 1 is mainly formed from a supporting substrate 10and an electronic device C on the supporting substrate 10. Thesupporting substrate 10 is disposed in the display area 2, in the wiringarea 5, and in a portion of the bending area 4. For example, as shown inFIG. 1, there is a portion of the bending area 4 that no supportingsubstrate 10 is disposed therein. In other words, a portion of thesupporting substrate 10 on the bending area 4 is removed. In someembodiments, the supporting substrate 10 is disposed in the display area2 rather than the wiring area 5.

The electronic device I may be, for example, a display device includingliquid crystal (LC), organic light-emitting diode (OLED), quantum dot(OD), fluorescent material, phosphor material, light-emitting diode(LED), mini light-emitting diode (Mini LED), micro light-emitting diode(Micro LED) or other display medias, but the present disclosure is notlimited there: The electronic device may also be, for example, a sensingdevice, an antenna, a combination thereof, or a combined electronicdevice by combining multiple electronic devices.

FIG. 2A is a schematic view of the electronic device 1 under a bendingcondition according to an embodiment of the present disclosure. In FIG.2A, the non-display area 3 is bent toward a backside of the display area2 (a surface adjacent to the supporting substrate 10), wherein thebending area 4 of the non-display area 3 is bent to have an arc-likedshape, and a space S is formed between the bending area 4 and thesupporting substrate 10. The supporting substrate 10 on the display area2 and the wiring area 5 may overlap or contact with each other. As aresult, when viewed from a front surface of the display area 2 (asurface away from the supporting substrate 10), the wiring area 5without a display function may be hided at the back side of the displayarea 2 to increase the area occupied by of the display area 2 or enhancethe freedom of wiring, so as to be a means for producing an electronicdevice having a narrow frame or a combined electronic device with anarrow gap.

FIG. 2B is a schematic view of the electronic device 1 under a bendingcondition according to another embodiment of the present disclosure. InFIG. 2B, the bending area 4 is bent toward a side of the supportingsubstrate 10 to approach or contact the side of the supporting substrate10 (as shown by an interface D), an angle between the display area 2 anda portion of the bending area 4 positioned on the side of the supportingsubstrate 10 is about 90 degrees, and an angle between the wiring area 5and the portion of the bending area 4 positioned on the side of thesupporting substrate 10 is also about 90 degrees. The portions of thesupporting substrate 10 on the display area 2 and the wiring area 5 mayoverlap or contact with each other. As a result, when viewed from afront surface of the display area 2 (the surface away from thesupporting substrate 10), the wiring area 5 without a display functionmay be hided at the back side of the display area 2 to increase the areaoccupied by the display area 2. Furthermore, because the angle betweenthe display area 2 and a portion of the bending area 4 positioned on theside of the supporting substrate 10 and the angle between the wiringarea 5 and the portion of the bending area 4 positioned on the side ofthe supporting substrate 10 are about 90 degrees, the area occupied bythe display area 2 when viewed from the front surface of the displayarea 2 may be further increased, the freedom of wiring may be enhanced,or the area occupied by the electronic device C at a gap formed duringcombination may be reduced, so as to be a means for producing anelectronic device having a narrow frame or a combined electronic devicewith a narrow gap.

FIG. 3A is a cross-sectional view of an electronic device 1A accordingto an embodiment of the present disclosure. in FIG. 3A, the electronicdevice 1A includes a supporting substrate 10, a flexible substrate 20, afirst organic insulating layer 30, a first conductive layer 40A, asecond conductive layer 50A, a resilient structure 60A, a second organicinsulating layer 70 and an inorganic insulating layer 80.

The flexible substrate 20 is disposed on the supporting substrate 10, anopening 12 is formed on the non-display area 3, wherein the supportingsubstrate 10 is penetrated by and separated as two portions by theopening 12. Furthermore, a portion of the flexible substrate 20 isexposed by the opening 12. in an embodiment, the supporting substrate 10terminates at the opening 12 and has two sides S1, S2 exposed. by theopening 12, and a space S is formed between the two sides S1, S2 and theflexible substrate 20 when the electronic device 1A is bent as shown inFIG. 2A, In another embodiment, the two sides S1, S2 directly contactthe flexible substrate 20 when the electronic device 1A is bent. In someembodiments, the supporting substrate 10 terminates at the opening 12and is not separated into two portions by the opening 12. The firstorganic insulating layer 30 and the inorganic insulating layer 80 aredisposed on the flexible substrate 20, and the thickness of the firstorganic insulating layer 30 and the thickness of the inorganicinsulating layer 80 are substantially the same. An interface 30A and aninterface 30B are formed between the first organic insulating layer 30and the inorganic insulating layer 80, and the angle formed between theinterface 30A or the interface 30B to the flexible substrate 20 is 01.In some embodiments of the present disclosure, the angle 01 is greaterthan 90 degrees and less than 180 degrees, but the present disclosure isnot limited thereto. The interface 30A and the interface SOB between thefirst organic insulating layer 30 and the inorganic insulating layer 80are the interface between the display area 2 and the bending area 4 andthe interface between the bending area 4 and the wiring area 5,respectively. If the interface 30A or the interface 30B is tilted, wherethe flexible substrate 20 and the interface 30A or the interface 30Bcontacts with each other may act as a border of different areas. Theinterface 30A or the interface 30B between the supporting substrate 10.In other words, the interface 30A or the interface 30B between the firstorganic insulating layer 30 and the inorganic insulating layer 80overlaps the supporting substrate 10 when viewed along a directionperpendicular to a surface of the flexible substrate 20. The chance ofthe interface 30A or the interface 30B being stripped due towithstanding bending stress may be reduced if the interface 30A or theinterface 30B is moved inwardly a certain distance from the border ofthe supporting substrate 10 so as to increase the reliability of theelectronic device 1A. Therefore, a distance between two sides S1, S2 ofthe supporting substrate 10 is less than a distance between the twointerfaces 30A, 30B. In the present disclosure, the directionperpendicular to the flexible substrate 20 is defined as the normaldirection. of a surface of the flexible substrate 20, and other elementsare disposed on the surface.

The first conductive layer 40A is disposed on the first organicinsulating layer 30 and the inorganic insulating layer 80, and thesecond conductive layer 50A is disposed on the first conductive layer40A. The resilient structure 60A includes a plurality of resilientelements 61A disposed between the first conductive layer 40A. and thesecond conductive layer 50A, and the second organic insulating layer 70is disposed on the second conductive layer 50A. The first organicinsulating layer 30, the first conductive layer 40A, the secondconductive layer 50A, the resilient structure 60A and the second organicinsulating layer 70 are disposed in the non-display area 3. In thisembodiment, the first conductive layer 40A is electrically connected toan active driving device disposed in the display area 2 or thenon-display area 3. The resilient elements 61A may include suitableorganic materials.

The supporting substrate 10 is used for supporting the whole electronicdevice 1A and includes suitable transparent materials such as glass,quartz, ceramic, sapphire or plastic, etc., but the present disclosureis not limited thereto. The flexible substrate 20 is deformable to helpthe electronic device IA being bent. The flexible substrate 20 includessuitable flexible materials, such as polycarbonate, polyimide,polypropylene or polyethylene terephthalate, etc. The first organicinsulating layer 30 and the second organic insulating layer 70 are usedto insulate the first conductive layer 40A, the second conductive layer50A and other elements from external environment, or used to distributethe stress created while being bent. Furthermore, the first organicinsulating layer 30 and the second organic insulating layer 70 mayinclude suitable organic materials. The thickness of the first organicinsulating layer 30 may be, for example, greater than or equal to 0.5μm, and less than or equal to 2 μm; and the thickness of the secondorganic insulating layer 70 may be, for example, greater than or equalto 1 μm, and less than or equal to 9 μm. However, the ranges are merelyexamples, and the thickness of the first organic insulating layer 30 andthe second organic insulating layer 70 are not limited thereto.

The materials of the first conductive layer 40A and the secondconductive layer 50A may include suitable conductive materials, such asconductive metal materials or conductive transparent materials, but thepresent disclosure is not limited thereto. The metal materials mayinclude suitable metals, such as Cu, Al, Mo, W, Au, Cr, Ni, Pt, Ti, Cualloy, Al alloy, Mo alloy, W alloy, Au alloy, Cr alloy, Ni alloy, Ptalloy, Ti alloy or the combination thereof, but the present disclosureis not limited thereto. The transparent conductive material may include,for example, indium tin oxide (ITO), indium gallium zinc oxide (IGZO), acombination thereof, other good conductive materials or low resistancematerials, but the present disclosure is not limited thereto.

In some embodiments, the first conductive layer 40A or the secondconductive layer 50A may be manufactured using the same photomask ormade of the same material as one of the layers of the active drivingdevices (e.g. switching transistor or driving transistor) or conductivepads. For example, the first conductive layer 40A and a source or drainuses the same photomask, and the second conductive layer 50A and aconductive pad uses the same photomask to reduce manufacturing costs,but the present disclosure is not limited thereto. In some embodiments,neither the first conductive layer 40A nor the second conductive layer50A uses the same photomask as the elements in the display area 2, norare they manufactured with same materials to the elements in the displayarea 2. In some embodiments, either the first conductive layer 40A orthe second conductive layer 50A is electrically connected to the activedriving devices in the display area 2 or in the non-display area 3. Insome embodiments, either the first conductive layer 40A or the secondconductive layer 50A is electrically connected to the wiring W on thewiring layer 5. In some embodiments, the self-illuminating display media(not shown) of the electronic device 1A, such as an LED, is electricallyconnected to a drain through, for example, a conductive pad or anotherconductive medium. In some embodiments, the self-illuminating displaymedia or the media for controlling conductance (not shown) of theelectronic device 1A, such as liquid crystal, is controlled by the drainor controlled by an electrode electrically connected to the drain.

The thickness of the first conductive layer 40A and the secondconductive layer 50A may be, for example, greater than or equal to 0.4μm, and less than or equal to 0.7 μm. The inorganic insulating layer 80may include suitable insulating materials, such as an inorganicinsulating material (e.g. SiO_(x), SiN_(x), SiO_(x)N_(y), etc.) having ahigher stiffness than the flexible substrate 20, but the presentdisclosure is not limited thereto. In some embodiments, the stiffnesscomparison is based on the Young's modulus of the materials.

In FIG. 3A, the resilient elements 61A are separated from each other fora distance rather than formed continuously. The distances between twoadjacent resilient elements 61A may be identical or different, and isnot limited thereto in the present disclosure. The first conductivelayer 40A contacts the second conductive layer 50A at intervals, and thefirst conductive layer 40A may contact the second conductive layer 50Adirectly or indirectly, as long as the first conductive layer 40A andthe second conductive layer 50A are electrically connected with eachother at intervals. The way how the first conductive layer 40A and thesecond conductive layer 50A contacting with each other may be applied toany embodiment of the present disclosure. It should be noted that eachof the resilient elements 61.A have a shape like a polygon, as shown inFIG. 3A. In other words, the parts where the first conductive layer 40Aand the second conductive layer 50A contact the resilient elements 61Aare several bent segments. Furthermore, the first conductive layer 40Acontacts the second conductive layer 50A and the resilient elements 61Aalternately to bend these structures. The thickness of the resilientstructure 60A may be, for example, greater than or equal to 1 μm, andless than or equal to 4 μm, such as 2 μm or 3 μm. 100331 The angle 01formed between the flexible substrate 20 to the interface 30A or theinterface 30B, which are the interfaces formed between the first organicinsulating layer 30 and the inorganic insulating layer 80, may he, forexample, greater than 90 degrees and less than 180 degrees. As a result,the first organic insulating layer 30 may be smoothly connected to theinorganic insulating layer 80 to reduce the stress here. Therefore, thestripping happened between the first organic insulating layer 30 and theinorganic insulating layer 80, which is caused by large stress, may beprevented.

It should be noted that in FIG. 3A, the supporting substrate 10 isseparated as two portions by the opening 12, the first conductive layer40A extends across the opening 12, and two ends of the first conductivelayer 40A are disposed on the two portions of the supporting substrate10. Furthermore, the second conductive layer 50A extends across theopening 12, and two ends of the second conductive layer 50A are disposedon the two portions of the supporting substrate 10. As a result, it canbe ensured that both of the first conductive layer 40A and the secondconductive layer 50A extend across the part where the bending area 4 isbent. As a result, even if one of the first conductive layer 40A or thesecond conductive layer 50A is fractured because of being bent duringusage, another one of the first conductive layer 40A or the secondconductive layer 50A can keep transporting electrical signal to enhancethe reliability of the electronic device 1.

FIG. 3B is an enlarged view of an area indicated by a dashed line inFIG. 3A. It should be noted that at least a portion of the secondconductive layer 50A overlaps a portion of the inorganic insulatinglayer 80 when viewed along a direction perpendicular to a surface of theflexible substrate 20. As a result, the area where the second conductivelayer 50A overlaps the inorganic insulating layer 80 may be increased bythis configuration so as to distribute the stress here, and the fracturehappens during bending may be prevented by preventing the stress frombeing too concentrated.

FIG. 3C is a cross-sectional view of the electronic device 1A in FIG. 3Awhile being bent in the same way as in FIG. 2A. The bending area 4 inFIG. 2A has an arc-liked shape, and the thickness L of the bending area4 may be, for example but not limited to, greater than or equal to 100μm, and less than or equal to 500 μm, such as 100 μm, 250 μm or 400 μm.In FIG. 3C, when comparing with the situation in FIG. 3A which theelectronic device 1A is not bent, the first conductive layer 40A iscompressed to increase the angle between each of the adjacent segmentsof the first conductive layer 40A, and the second conductive layer 50Ais stretched to decrease the angle between each of the adjacent segmentsof the second conductive layer 50A, so the resilient structure 60A. maybe deformed, as indicated by arrows 401 and arrows 501. As a result, thestress created when the bending area 4 of the electronic device 1A isbent may be distributed, the wiring area 5 may be hided at the back sideof the display area 2, or the freedom of wiring may be increased, so asto be a means for producing an electronic device having a narrow frameor a combined electronic device with a narrow gap.

FIG. 3D is a cross-sectional view of the electronic device 1A in FIG. 3Awhile being bent in the same way as in FIG. 2B. It should be noted thatthe ratios of the sizes between the elements in FIG. 3D are differentfrom the former figures for convenience. In FIG. 3D, when comparing withthe situation in FIG. 3B which the electronic device 1A is not bent, thefirst conductive layer 40A is compressed to increase the angle betweeneach of the adjacent segments of the first conductive layer 40A, and thesecond conductive layer 50A is stretched to decrease the angle betweeneach of the adjacent segments of the second conductive layer 50A, so theresilient structure 60A may be deformed. Furthermore, at the interfaceD, the flexible substrate 20 exposed by the opening 12 comes closer toor contacts with the supporting substrate 10 during the bendingcondition shown in FIG. 3D. As a result, while the bending area 4 of theelectronic device 1A is bent, the wiring area 5 may be hided at the backside of the display area 2, or the freedom of wiring may be increased,so as to be a means for producing an electronic device having a narrowframe or a combined electronic device with a narrow gap.

FIG. 4A is a cross-sectional view of an electronic device 1B accordingto another embodiment of the present disclosure. In FIG. 4A, theelectronic device 1B includes a supporting substrate 10, a flexiblesubstrate 20, a first organic insulating layer 30, a first conductivelayer 40B, a second conductive layer 5013, a resilient structure 60B, asecond organic insulating layer 70 and an inorganic insulating layer 80.

The flexible substrate 20 is disposed on the supporting substrate 10. Atthe non-display area 3, the supporting substrate 10 is separated by theopening 12 as two portions, and some of the flexible substrate 20 isexposed by the opening 12. The first organic insulating layer 30 and theinorganic insulating layer 80 are disposed on the flexible substrate 20,and the thickness of the first organic insulating layer 30 issubstantially identical to the thickness of the inorganic insulatinglayer 80. The angle between the interface 30A or the interface 30B tothe flexible substrate 20 is θ1, wherein the interface 30A or theinterface 30B are interfaces formed between the first organic insulatinglayer 30 and the inorganic insulating layer 80. In sonic embodiments,the angle θ1 is greater than 90 degrees and less than 180 degrees.

The first conductive layer 40B is disposed on the first organicinsulating layer 30 and the inorganic insulating layer 80, and thesecond conductive layer 50B is disposed on the first conductive layer40B. The resilient structure 60B includes a plurality of resilientelements 61B disposed between the first conductive layer 40B and thesecond conductive layer 50B, and the second organic insulating layer 70is disposed on the: second conductive layer 50B. The first organicinsulating layer 30, the first conductive layer 4013, the secondconductive layer 50B, the resilient structure 60B and the second organicinsulating layer 70 are disposed in the non-display area 3.

In this embodiment, the materials of the supporting substrate 10, theflexible substrate 20, the first organic insulating layer 30, the firstconductive layer 40B, the second conductive layer 50B, the resilientstructure 60B, the second organic insulating layer 70 and the inorganicinsulating layer 80 are identical or similar to the material of thesupporting substrate 10, the flexible substrate 20, the first organicinsulating layer 30, the first conductive layer 40A, the secondconductive layer 50A, the resilient structure 60A, the second organicinsulating layer 70 and the inorganic insulating layer 80, respectively,and are not repeated.

In FIG. 4A, there is a distance between each of the resilient elements6113 rather than forming the resilient elements 61B continuously. Thedistance between two adjacent resilient elements 61B may be identical ordifferent. The first conductive layer 40B contacts the second conductivelayer 50B at intervals, wherein the first conductive layer 40B maydirectly contact the second conductive layer 50B at intervals, orconductive elements may be disposed between the first conductive layer40B and the second conductive layer 50B to allow the first conductivelayer 40B indirectly contacts the second conductive layer 50B atintervals. Furthermore, the first conductive layer 4013 contacts thesecond conductive layer 50B and the resilient elements 61B alternatelyto bend these structures. It is different from the embodiment shown inFIG. 3A that the sides where the resilient elements 61B contact thefirst conductive layer 40B and the second conductive layer 50B have anarc-liked shape. In other words, the first conductive layer 40B and thesecond conductive layer 50B are disposed on the resilient elements 61Bsmoothly and have a wavy shape instead of being bent as severalsegments. In this embodiment, the first organic insulating 30 and theresilient elements 61B having arc-shaped sides may be made by using amulti-tone mask, such as half tone mask or gray tone mask. However, thepresent disclosure is not limited thereto.

FIG. 4B is a schematic view of the electronic device 1B while being bentin the same way as in FIG. 2A. In FIG. 4B, the bending area 4 has anarc-liked shape, and the thickness L of the bending area 4 is greaterthan or equal to 100 μm and less than or equal to 500 μm, such as 100μm, 250 μm or 400 μm. Similar to the embodiment shown in FIG. 3C, thefirst conductive layer 40B is compressed and the second conductive layer50B is stretched, so the resilient structure 60B may be deformed. As aresult, while the bending area 4 of the electronic device 1B is bent,the wiring area 5 may be hided at the back side of the display area 2,or the freedom of wiring may be increased, so as to be a means forproducing an electronic device having a narrow frame or a combinedelectronic device with a narrow gap.

FIG. 4C is a cross-sectional view of the electronic device 1B whilebeing bent in the same way as in FIG. 2B. It should be noted that theratios of the sizes between the elements in FIG. 4C are different fromthe former figures for convenience. In FIG. 4C, when comparing with FIG.4A which the electronic device 1A is not bent, the first conductivelayer 40B is compressed, and the second conductive layer 50B isstretched, so the resilient structure 60B may be deformed. Furthermore,at the interface E, the flexible substrate 20 exposed by the opening 12comes closer to or contacts with the supporting substrate 10 during thebending condition shown in FIG. 4C. As a result, while the bending area4 of the electronic device 1B is bent, the wiring area 5 may be hided atthe back side of the display area 2, or the freedom of wiring may beincreased, so as to be a means for producing an electronic device havinga narrow frame or a combined electronic device with a narrow gap.

FIGS. 5A to 5C are schematic views of the position relationship betweenthe second conductive layer 50A (or the second conductive layer 50B) tothe resilient elements 61A (or the resilient elements 61B) of thebending area 4 when viewed along a normal direction to the surface ofthe flexible substrate 20. Hereinafter, the resilient elements 61A andthe resilient elements 61B are described as resilient elements 62,resilient elements 63, first resilient elements 64A and second resilientelements 64B in different embodiments. It should be noted that the firstconductive layer 40A or the first conductive layer 40B overlaps thesecond conductive layer 50A or the second conductive layer 50B in topview, respectively, so the first conductive layer 40A or the firstconductive layer 40B is not illustrated,

In FIG. 5A, the second conductive layer 50A or the second conductivelayer 50B includes a plurality of conductive strips 52 extended alongthe Y direction and parallel with each other. In the present disclosure,the display area 2, the bending area 4 and the wiring area 5 arearranged along the Y direction. In this embodiment, each of theresilient elements 62 has an island-liked shape, wherein there are aplurality of resilient elements 62 disposed under each of the conductivestrips 52 at interval. The resilient elements 62 on different conductivestrips 52 are arranged along the X direction to increase the symmetriesof the stress along different directions. As a result, the possibilityof the devices being damaged caused by the stress concentration on adirection due to asymmetry of the stresses may be reduced. In otherembodiments, the resilient elements 62 on different conductive strips 52may be not aligned along the X direction. In other embodiments, theamount of the resilient elements 62 on different conductive strips 52may be different. Furthermore, although the width of the resilientelements 62 along the X direction is illustrated as identical to thewidth of the conductive strips 52 along the X direction, the presentdisclosure is not limited thereto. For example, depending on designrequirement, the dimension of the resilient elements 62 may be adjustedto allow the width of the resilient elements 62 along the X directionbeing greater than or less than the width of the conductive strips 52along the X direction to increase the freedom of processes.

In FIG. 5B, the second conductive layer 50A or the second conductivelayer 50B includes a plurality of conductive strips 52 extended alongthe Y direction and parallel with each other. In this embodiment, eachof the resilient elements 63 is strip-shaped, extends toward the Xdirection and passes under a plurality of conductive strips 32. In otherwords, each of the resilient elements 63 passes through multipleconductive strips 52, wherein the X direction is substantiallyperpendicular to the Y direction. The resilient elements 63 aresubstantially parallel to each other to increase the symmetries of thestress along different directions. As a result, the possibility of thedevices being damaged caused by the stress concentration due toasymmetry of the stresses may be reduced. In other embodiments, theresilient elements 63 may be not parallel to each other.

In FIG. 5C, the second conductive layer 50A or the second conductivelayer 50B includes a plurality of conductive strips 52 extended alongthe Y direction and parallel to each other. In this embodiment, theresilient structure has a mesh-liked shape and includes a pluralityfirst strip structures 64A and a plurality of second strip structures64B, wherein the first strip structures 64A and the second stripstructures 64B intersect at a plurality of intersections, and theintersections overlap the conductive strips 52. Although the resilientstructure in this embodiment is illustrated as having different firststrip structures 64A and second strip structures 64B for convenience,the actual first strip structures 64A and the second strip strictures64Bare formed integrally and disposed on the same plane. An angle θ2 isformed between the first strip structure 64A and the conductive strip anangle θ3 is formed between the second strip structure 64B and theconductive strip 52, and the angle θ2 and the angle θ3 are substantiallyidentical. In other words, the first strip structure 64A and the secondstrip structure 64B are symmetrical relative to the conductive strip 52to increase the symmetries of the stress along different directions. Asa result, the possibility of the devices being damaged caused by thestress concentration due to asymmetry of the stresses may be reduced. Inother embodiments, the angle θ2 may be different than the angle θ3.

FIG. 6 is a flow diagram 100 of manufacturing the electronic deviceaccording to some embodiments of the present disclosure. In step 102, asupporting substrate is provided. In step 104, a flexible substrate isprovided on the supporting substrate. In step 106, a thin-filmtransistor (TFT) may be provided on the flexible substrate. For example,the thin-film transistor may be a semiconductor layer (e.g. amorphoussilicon or low temperature poly-silicon (LIPS)), a top gate, bottom gateor double gate thin film transistor formed by metal oxide. In step 108,an inorganic insulating layer is provided on the thin-film transistor.In step 110, a portion of the inorganic insulating layer is removedthrough lithography process, and a first organic insulating layer isprovided at where the inorganic insulating layer is removed. In step112, a first conductive layer is provided on the first organicinsulating layer. In step 114, a resilient structure is provided on thefirst conductive layer. In step 116, a second conductive layer isprovided on the resilient structure. In step 118, a second organicinsulating layer is provided on the second conductive layer.

In summary, a flexible electronic device is provided in the presentdisclosure. The structure of the flexible electronic device is flexible,which allows its wiring area being hidden at the back side of thedisplay area, enhancing the freedom of wiring, and allows a greaterdisplay space, so as to be a means for producing an electronic devicehaving a narrow frame or a combined electronic device with a narrow gap.Furthermore, at least two conductive structures electrically connectedwith each other are formed in the bending area. As a result, even if oneof the conductive structures is fractured because of being bent, anotherconductive structure can keep transporting electrical signal to increasethe reliability of the electronic device.

Although embodiments of the present disclosure and their advantages havebeen described in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims. Moreover, the scope of the present application is not intendedto be limited to the particular embodiments of the process, machine,manufacture, and composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the disclosure of the present disclosure,processes, machines, manufacture, compositions of matter, means,methods, or steps, presently existing or later to he developed, thatperform substantially the same function or achieve substantially thesame result as the corresponding embodiments described herein may beutilized according to the present disclosure. Accordingly, the appendedclaims are intended to include within their scope of such processes,machines, manufacture, and compositions of matter, means, methods, orsteps. In addition, each claim constitutes a separate embodiment, andthe combination of various claims and embodiments are within the scopeof the disclosure.

What is claimed is:
 1. An electronic device comprising: a supportingsubstrate; a flexible substrate disposed on the supporting substrate; afirst conductive layer disposed on the flexible substrate; a secondconductive layer disposed on the first conductive layer; a plurality oforganic elements disposed between the first conductive layer and thesecond conductive layer; and an opening passing through the supportingsubstrate and exposing a portion of the flexible substrate, wherein thefirst conductive layer alternately contacts the second conductive layerand the plurality of organic elements.
 2. The electronic device asclaimed in claim 1, wherein the supporting substrate comprises a firstportion and a second portion, the first portion has a first side, thesecond portion has a second side adjacent to the first side, and adistance between the first side and the second side is greater than aminimum distance between two of the plurality of the organic elementsthat are adjacent to each other.
 3. The electronic device as claimed inclaim 2, wherein the distance between the first side and the second sideis greater than a maximum width of at least one of the plurality of theorganic elements.
 4. The electronic device as claimed in claim 2,wherein the minim n distance between the two of the plurality of theorganic elements that are adjacent to each other is different from amaximum width of at least one of the plurality of the organic elements.5. The electronic device as claimed in claim 1, wherein a maximumthickness of the supporting substrate is greater than a maximumthickness of the flexible substrate.
 6. The electronic device as claimedin claim 1, wherein a maximum thickness of at least one of the pluralityof the organic elements is greater than a maximum thickness of the firstconductive layer.
 7. The electronic device as claimed in claim 1,wherein a maximum thickness of at least one of the plurality of theorganic elements is greater than a maximum thickness of the secondconductive layer.
 8. The electronic device as claimed in claim 1,wherein each of the plurality of organic elements has an arc-liked shapein a cross-sectional view.
 9. The electronic device as claimed in claim1, wherein a portion of the first conductive layer is between theplurality of organic elements.
 10. The electronic device as claimed inclaim 1, further comprising an inorganic insulating layer disposedbetween the flexible substrate and the first conductive layer, whereinthe second conductive layer overlaps a portion of the inorganicinsulating layer.
 11. The electronic device as claimed in claim 1,further comprising an organic insulating layer disposed on the secondconductive layer.
 12. The electronic device as claimed in claim 1,further comprising: an inorganic insulating layer disposed between theflexible substrate and the first conductive layer; and an organicinsulating layer disposed on the second conductive layer.